Monolayer hexagonal Boron Nitride (hBN) on Si/SiO<sub>2</sub> wafer

产品名称：

10043-11-5
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO₂ wafer
Boronitrene
Hexagonal boron nitride monolayer
White graphene
Single-layer hexagonal boron nitride

产品介绍：

产品说明

应用

Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:

Two-dimensional electronics
Nanophotonic and other optoelectronic devices
Quantum communication and information science
Aerospace industry
MEMS and NEMS
Micro-/nano- actuators
Insulating/transparent coatings.

储存及稳定性

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

基本信息

经验(实验)分子式	BN
分子量	24.82
MDL编号	MFCD00008279

产品性质

质量水平	100
描述	Monolayer h-BN hBN Coverage: 100% with sporadic adlayers Bandgap: 5.97 eV Raman Peak: 1370 /cm^-1 Orientation: <1-0-0> Metal Impurities: 1.00e10 – 5.00e10 (at/cm²) Substrate Type/Doping: P/B Wafer Thickness : 500 ± 50 μm Oxide Thickness: 300 nm Resistivity: 1 – 10 (ohm/cm)
直径	100 mm (4 in.)
晶粒度	>4 μm

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	WGK 3
闪点(F)	Not applicable
闪点(C)	Not applicable

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO₂ wafer