产品说明

一般描述

• Graphene film.
• Growth method: CVD synthesis.
• Appearance: Transparent film.
• Transparency: >97%.
• Coverage: >95%.
• Number of graphene layers: 1.
• Thickness (theoretical): 0.345 nm.
• FET electron mobility on Al₂O₃: 2000 cm²/Vs.
• Hall electron mobility on SiO₂/Si: 4000 cm²/Vs.
• Sheet resistance on SiO₂/Si: 450±40 Ω/sq (1cm x1cm).
• Grain size: Up to 10 μm.
• Substrate: Copper Foil.
• Thickness: 18 μm.

The product is pre-treated for easier bottom layer removal. The monolayer graphene on the back side of copper is partially removed but not completely so an additional treatment like RIE is needed before transfer to eliminate the bottom layer totally.

应用

• Flexible batteries.
• Electronics.
• Aerospace industry.
• MEMS and NEMS.
• Microactuators.
• Conductive coatings.

产品性质

质量水平	100
形式	film

安全信息

储存分类代码	13 - Non Combustible Solids
WGK	WGK 2
闪点(F)	Not applicable
闪点(C)	Not applicable