产品说明
应用
Zirconium tert-butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150℃ to 300℃, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process.
包装
25 g in stainless steel cylinder
基本信息
| 线性分子式 | Zr[OC(CH3)3]4 |
| 分子量 | 383.68 |
| Beilstein | 3681870 |
| MDL编号 | MFCD00075085 |
| PubChem化学物质编号 | 329766792 |
| NACRES | NA.23 |
产品性质
| 形式 | liquid |
| reaction suitability | core: zirconium |
| 折射率 | n |
| bp | 81 ℃/3 mmHg (lit.) |
| 密度 | 0.985 g/mL at 25 ℃ (lit.) |
| SMILES string | CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C |
| InChI | 1S/4C4H9O.Zr/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4 |
| InChI key | BGGIUGXMWNKMCP-UHFFFAOYSA-N |
安全信息
| 象形图 |  |
| 警示用语： | Warning |
| 危险声明 | H315 - H319 - H335 |
| 预防措施声明 | P261 - P264 - P271 - P280 - P302 + P352 - P305 + P351 + P338 |
| 危险分类 | Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3 |
| 靶器官 | Respiratory system |
| 储存分类代码 | 10 - Combustible liquids |
| WGK | WGK 3 |
| 闪点(F) | 183.2 °F - closed cup |
| 闪点(C) | 84 ℃ - closed cup |
Sigma-Aldrich
m.cnreagent.com
