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位置:首页 > 品牌 > Sigma-Aldrich > 5,5′-[[4,4,9,9-Tetrakis(4-hexylphenyl)-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl]bis(2,1,3-benzothiadiazole-7,4-diylmethylidyne)]bis[3-ethyl-2-thioxo-4-thiazolidinone]

IDT-2Br

5,5′-[[4,4,9,9-Tetrakis(4-hexylphenyl)-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl]bis(2,1,3-benzothiadiazole-7,4-diylmethylidyne)]bis[3-ethyl-2-thioxo-4-thiazolidinone]

品牌
Sigma-Aldrich
CAS
2042521-91-3
货号
910635
包装型号
规格纯度
≥99%
参考价格
4495.21 *本价格含增值税费
促销
服务
  • 原厂保证
  • 包邮
  • 增值税票
数量
-+
产品名称:
2042521-91-3
IDT-2Br
5,5′-[[4,4,9,9-Tetrakis(4-hexylphenyl)-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl]bis(2,1,3-benzothiadiazole-7,4-diylmethylidyne)]bis[3-ethyl-2-thioxo-4-thiazolidinone]
IDT-BT-R
产品介绍:

产品说明

一般描述

Non-fullerene acceptors (NFAs) are currently a major focus of research in the development of bulk-heterojunction organic solar cells (OSCs). In contrast to the widely used fullerene acceptors (FAs), the optical properties and electronic energy levels of NFAs can be designed and readily tuned. NFA-based OSCs can also achieve greater thermal stability and photochemical stability, as well as longer device lifetimes, than their FA-based counterparts.Recent developments have led to a rapid increase in power conversion efficiencies for NFA OSCs, with values now exceeding 15% in a single junction cell, and >17% for a tandem cell, demonstrating the viability of using NFAs to replace FAs in next-generation high-performance OSCs.

应用

IDT-2BR is a medium-high bandgap nonfullerene acceptors (NFAs). It was reported that IDT-2BR could produce a high power conversion efficiency (PCE) of over 10% when used with low-bandgap p-type polymer PTB7-Th (Product No. 794333). A prominent feature of this blend is the very small energy loss (< 0.6 eV) in the cell, which allows for a very high open circuit voltages in the device (> 1 V).
Ternary blend organic solar cells (OSCs) with photoresponses beyond 1000 nm can be fabricated using PTB7-Th as donor and ultralow-bandgap F8IC and medium-high bandgap IDT-2BR as NFAs. A PCE of 12.1% has been achieved by such a ternary device with 20% IDT-2BR content in acceptors. In this work, IDT-2BR was found to contribute simultanously to the improvement of the open-circuit voltage (VOC), short-circuit (JSC) and fill factor (FF) of the PTB7-Th/F8IC blend, due to smaller energy offset for charge separation, suppressed charge recombination, and imporved light absorption. Improved packing due to the coexsitence of F8IC and IDT-2BR leads to higher mobilities and more balanced charge transport, which contribute to the improved FF as well.
Additionaly, blends with IDT-2BR have been found to be thermally stable at 150 Celsius.
A ternary blend using both IDT-2BR and fullerene based acceptor: PC71BM (Product No. 684465) has also reached a PCE over 12%.

基本信息

经验(实验)分子式C88H88N6O2S8
分子量1518.20

产品性质

描述Band gap: 1.83 eV
测定≥99%
形式solid
分子量 1518.20  g/mol
颜色dark
溶解性chloroform: soluble
轨道能量HOMO -5.52  eV 
LUMO -3.69 eV 

安全信息

储存分类代码13 - Non Combustible Solids
WGKWGK 3
闪点(F)Not applicable
闪点(C)Not applicable

Sigma-Aldrich

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