产品说明
应用
Tantalum(V) ethoxide precursor is used to deposit ultra thin films of Tantalum oxide and other tantalum containing films by atomic layer deposition and chemical vapor deposition methods
包装
25 g in stainless steel cylinder
基本信息
线性分子式 | Ta(OC2H5)5 |
分子量 | 406.25 |
Beilstein | 3678999 |
EC 号 | 228-010-2 |
MDL编号 | MFCD00049785 |
PubChem化学物质编号 | 329766860 |
NACRES | NA.23 |
产品性质
形式 | liquid |
折射率 | n |
bp | 155 ℃/0.01 mmHg (lit.) |
mp | 21 ℃ (lit.) |
密度 | 1.566 g/mL at 25 ℃ (lit.) |
SMILES string | CCO[Ta](OCC)(OCC)(OCC)OCC |
InChI | 1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5 |
InChI key | HSXKFDGTKKAEHL-UHFFFAOYSA-N |
安全信息
象形图 | |
警示用语: | Warning |
危险声明 | H226 |
预防措施声明 | P210 - P233 - P240 - P241 - P242 - P243 |
危险分类 | Flam. Liq. 3 |
储存分类代码 | 3 - Flammable liquids |
WGK | WGK 1 |
闪点(F) | 84.2 °F - closed cup |
闪点(C) | 29 ℃ - closed cup |
Sigma-Aldrich